 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5109 Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band Low Noise Amplifier.(LNA) . BLOCK DIAGRAM FEATURES RF frequency : 27.0 to 30.0 GHz Super Low Noise NF=2.5dB (TYP.) In Vg1 Vg2 Vg3 Out PHOTOGRAPH ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Vd Id Vg Pin Ta Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (Duration < 1sec) Operating temperature range Parameter Values 3 30 Unit V mA V dBm C TBD TBD Limits TARGET SPECIFICATIONS (Ta=25C) Symbol Fop Gain Delta gain NF VSWR in VSWR out P1dB Output IP3 Vd Id Vg Parameter Operating frequency range Small signal gain Small signal gain flatness Noise figure Input VSWR Output VSWR Output power at 1 dB compression Output power at 3rdorder intercept point Drain bias voltage Drain bias current Gate bias voltage Freq=30GHz Vd=2.5V,Id=20mA On-wafer measurement 27.0 17.0 18.0 1.5 2.5 2.5:1 2.0:1 (5) TBD (17) TBD 2.5 30 No need dBm dBm V mA V as of July '98 30.0 Test conditions Min. Typ. Max. Unit GHz dB dB dB MITSUBISHI ELECTRIC PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5109 Ka-Band 3-Stage Self Bias Low Noise Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : m) 1824 1808 1308 808 308 116 Vd1 Vd2 Vd3 GND GND RF-in GND Vg1 Vg2 Vg3 GND RF-out GND GND 145 645 1145 1645 1940 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5109 Ka-Band 3-Stage Self Bias Low Noise Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 2.5 V, Id = 30 mA, Ta = 25 C ) 25 20 15 10 5 0 VSWR in VSWR out NF 10 8 6 4 2 0 26 27 28 29 30 Frequency [GHz] 31 32 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5109 Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT Cb *1 *2 Cb Cb :Chip capacitor (39pF) Cb > 100F Vd1 Vd2 Vd3 GND GND RF-in GND Vg1 Vg2 Vg3 GND GND RF-out GND *1 *2 *1 Length of bonding wire < 200 m *2 Number of bonding wire 3 MITSUBISHI ELECTRIC as of July '98 |
Price & Availability of MGFC5109
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |